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| inchange semiconductor product specification silicon npn power transistors 2N6098 2n6099 2n6100 2n6101 description ? with to-220 package ? high current capability applications ? for use in general-purpose amplifier and switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2N6098 70 2n6099 70 2n6100 80 v cbo collector-base voltage 2n6101 open emitter 80 v 2N6098 70 2n6099 70 2n6100 80 v ceo collector-emitter voltage 2n6101 open base 80 v v ebo emitter-base voltage open collector 8 v i c collector current 10 a p t total power dissipation t c =25 ?? 75 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.67 ??/w free datasheet http:///
inchange semiconductor product specification 2 silicon npn power transistors 2N6098 2n6099 2n6100 2n6101 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N6098 70 2n6099 70 2n6100 80 v ceo(sus) collector-emitter sustaining voltage 2n6101 i c =0.1a ;i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =5a;i b =0.5a 1.3 v v cesat-2 collector-emitter saturation voltage i c =10a;i b =2.5a 3.5 v 2N6098/6099 i c =4a ; v ce =4v v be base-emitter on voltage 2n6100/6101 i c =5a ; v ce =4v 1.3 v i cbo collector cut-off current v cb =rated v cbo ;i e =0 t c =150 ?? 0.5 2.0 ma i ebo emitter cut-off current v eb =8v; i c =0 1.0 ma 2N6098/6099 i c =4a ; v ce =4v h fe dc current gain 2n6100/6101 i c =5a ; v ce =4v 20 80 f t transition frequency i c =1a ; v ce =10v 0.8 mhz free datasheet http:/// inchange semiconductor product specification 3 silicon npn power transistors 2N6098 2n6099 2n6100 2n6101 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) free datasheet http:/// |
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